data sheet semiconductor http://www.yeashin.com 1 rev.02 20120403 h mmbz52xxb series 225 mw sot-23 zener v oltage regulator diodes general da ta applicable to all series in this group zener v oltage regulator diodes maximum case tempera ture for soldering purposes: 260c for 10 seconds thermal characteristics characteristic symbol max unit total device dissipation fr-5 board* p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance junction to ambient r ja 5 56 c/w total device dissipation p d 300 mw alumina substrate,** t a = 25c derate above 25c 2.4 mw/c thermal resistance junction to ambient r ja 4 17 c/w junction and storage temeprature t j , t stg 150 c **fr-5 = 1.0 x 0.75 x 0.62 in. **alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3 cathode 1 anode sot?23 (to?236ab) 1 2 3
http://www.yeashin.com 2 rev.02 20120403 mmbz52xxb series electrical characteristics (pinout: 1-anode, 2-nc, 3-cathode) (v f = 0.9 v max @ i f = 10 ma for all types.) mmbz5221b 18a 20 2.4 1200 30 100 1 mmbz5222b 18b 20 2.5 1250 30 100 1 mmbz5223b 18c 20 2.7 1300 30 75 1 mmbz5224b 18d 20 2.8 1400 30 75 1 MMBZ5225B 18e 20 3 1600 29 50 1 mmbz5226b 8a 20 3.3 1600 28 25 1 mmbz5227b 8b 20 3.6 1700 24 15 1 mmbz5228b 8c 20 3.9 1900 23 10 1 mmbz5229b 8d 20 4.3 2000 22 5 1 mmbz5230b 8e 20 4.7 1900 19 5 2 mmbz5231b 8f 20 5.1 1600 17 5 2 mmbz5232b 8g 20 5.6 1600 11 5 3 mmbz5233b 8h 20 6 1600 7 5 3.5 mmbz5234b 8j 20 6.2 1000 7 5 4 mmbz5235b 8k 20 6.8 750 5 3 5 mmbz5236b 8l 20 7.5 500 6 3 6 mmbz5237b 8m 20 8.2 500 8 3 6.5 mmbz5238b 8n 20 8.7 600 8 3 6.5 mmbz5239b 8p 20 9.1 600 10 3 7 mmbz5240b 8q 20 10 600 17 3 8 mmbz5241b 8r 20 11 600 22 2 8.4 mmbz5242b 8s 20 12 600 30 1 9.1 mmbz5243b 8t 9.5 13 600 13 0.5 9.9 mmbz5244b 8u 9 14 600 15 0.1 10 mmbz5245b 8v 8.5 15 600 16 0.1 11 mmbz5246b 8w 7.8 16 600 17 0.1 12 mmbz5247b 8x 7.4 17 600 19 0.1 13 mmbz5248b 8y 7 18 600 21 0.1 14 mmbz5249b 8z 6.6 19 600 23 0.1 14 mmbz5250b 81a 6.2 20 600 25 0.1 15 mmbz5251b 81b 5.6 22 600 29 0.1 17 mmbz5252b 81c 5.2 24 600 33 0.1 18 mmbz5253b 81d 5 25 600 35 0.1 19 mmbz5254b 81e 4.6 27 600 41 0.1 21 mmbz5255b 81f 4.5 28 600 44 0.1 21 mmbz5256b 81g 4.2 30 600 49 0.1 23 mmbz5257b 81h 3.8 33 700 58 0.1 25 mmbz5258b 81j 3.4 36 700 70 0.1 27 mmbz5259b 81k 3.2 39 800 80 0.1 30 mmbz5260b 18f 3 43 900 93 0.1 33 mmbz5261b 81m 2.7 47 1000 105 0.1 36 mmbz5262b 81n 2.5 51 1100 125 0.1 39 mmbz5263b 81p 2.2 56 1300 150 0.1 43 mmbz5264b 81q 2.1 60 1400 170 0.1 46 mmbz5265b 81r 2 62 1400 185 0.1 47 mmbz5266b 81s 1.8 68 1600 230 0.1 52 mmbz5267b 81t 1.7 75 1700 270 0.1 56 mmbz5268b 81u 1.5 82 2000 330 0.1 62 mmbz5269b 81v 1.4 87 2200 370 0.1 68 mmbz5270b 81w 1.4 91 2300 400 0.1 69 device marking test current i zt ma zener voltage vz(+5%) nominal (note1) z zk i z =0.25ma ? ? ? ? ? max z zk i z =izt@10%mod ? ? ? ? ? max max i r @v r av note 1. zener voltage is measured with a pulse test current (i zt ) applied at an ambient temperature of 25 c
http://www.yeashin.com 3 rev.02 20120403 mmbz52xxb series device characteristics 8 7 6 5 4 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 11 12 100 10 1 10 100 1k 100 10 1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v z , nominal zener voltage (v) figure 1. temperature coefficients (temperature range ?5 5 c to +15 0 c) v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ?5 5 c to +15 0 c) v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance v f , forward voltage (v) figure 4. typical forward voltage vz , temperature coefficient (mv/ c) vz , temperature coefficient (mv/ c) z zt , dynamic impedance ( ? ) i f , forward current (ma) v z @ i zt typical t c values for mmbz5221blt1 series typical t c values for mmbz5221blt1 series t j = 25c i z(ac) = 0.1 i z(dc) f = 1 khz v z @ i zt i z = 1 ma 5 ma 20 ma 1000 100 10 1 150c 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 75c 25c 0c
http://www.yeashin.com 4 rev.02 20120403 mmbz52xxb series device characteristics 1000 100 10 1 1 10 100 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 0 102030 40 506070 8090 100 10 1 0.1 0 024681012 10 30 50 70 90 100 10 1 0.1 0.01 bias at 50% of v z nom v z , nominal zener voltage (v) figure 5. typical capacitance v z , nominal zener voltage (v) figure 6. typical leakage current v z , zener voltage (v) figure 7. zener voltage versus zener current (v z up to 12 v) v z , zener voltage (v) figure 8. zener voltage versus zener current (12 v to 91 v) t a = 25c 0 v bias 1 v bias t a = 25c t a = 25c +150c +25c ?55c c, capacitance (pf) i r , leakage current ( a) i z , zener current (ma) i z , zener current (ma)
http://www.yeashin.com 4 rev.02 20120403 mmbz52xxb series package outline & dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. a b c d g h j k l s v inches millimeters dim min max min max 2.80 1.20 0.89 0.37 1.78 0.013 0.085 0.45 0.89 2.10 0.45 3.04 1.40 1.11 0.50 2.04 0.100 0.177 0.60 1.02 2.50 0.60 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0180 0.0350 0.0830 0.0177 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0236 0.0401 0.0984 0.0236 (refer to section 10 for surface mount, thermal data and footprint information.) sot-23 footprint casef318-07 plastic a l s v fg 1 2 3 c k j b d h style 8: pin 1. anode 2. no connection 3. cathode mm inches () 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8
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